Floating body induced pre-kink excess low-frequency noise in submicron SOI CMOSFET technology

The well-known post-kink Lorentzian-like noise overshoot has been empirically correlated to the ac kink effect in the SOI CMOSFET in the past. This work demonstrates the existence of a 1/f/sup 2/ excess noise spectrum (

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Bibliographic Details
Published in:IEEE electron device letters 1999-09, Vol.20 (9), p.484-486
Main Authors: Ying-Che Tseng, Huang, W.M., Ilderem, V., Woo, J.C.S.
Format: Article
Language:English
Subjects:
CMOS
CMOS digital integrated circuits
CMOS process
CMOS technology
CMOSFETs
Devices
Electric potential
Fluctuation
Fluctuations
Frequency
Impact ionization
Instability
Ionization
Low-frequency noise
Noise
Semiconductor device noise
Voltage
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Description
Summary:The well-known post-kink Lorentzian-like noise overshoot has been empirically correlated to the ac kink effect in the SOI CMOSFET in the past. This work demonstrates the existence of a 1/f/sup 2/ excess noise spectrum (
ISSN:0741-3106
1558-0563
DOI:10.1109/55.784460