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Floating body induced pre-kink excess low-frequency noise in submicron SOI CMOSFET technology
The well-known post-kink Lorentzian-like noise overshoot has been empirically correlated to the ac kink effect in the SOI CMOSFET in the past. This work demonstrates the existence of a 1/f/sup 2/ excess noise spectrum (
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| Published in: | IEEE electron device letters 1999-09, Vol.20 (9), p.484-486 |
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| Main Authors: | , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c224t-f7e44d1de4487533267d87fca4b10893f042c9317edea072b2d4c63876e5a3df3 |
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| cites | cdi_FETCH-LOGICAL-c224t-f7e44d1de4487533267d87fca4b10893f042c9317edea072b2d4c63876e5a3df3 |
| container_end_page | 486 |
| container_issue | 9 |
| container_start_page | 484 |
| container_title | IEEE electron device letters |
| container_volume | 20 |
| creator | Ying-Che Tseng Huang, W.M. Ilderem, V. Woo, J.C.S. |
| description | The well-known post-kink Lorentzian-like noise overshoot has been empirically correlated to the ac kink effect in the SOI CMOSFET in the past. This work demonstrates the existence of a 1/f/sup 2/ excess noise spectrum ( |
| doi_str_mv | 10.1109/55.784460 |
| format | article |
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This work demonstrates the existence of a 1/f/sup 2/ excess noise spectrum (<100 Hz) superimposed upon 1/f noise in partially depleted (PD) floating body SOI CMOS when devices are biased in the pre-kink region (before the dc kink onset voltage). While the impact ionization phenomenon is negligible in the pre-kink region, the new observed pre-kink excess noise provides a new insight into the body voltage instability and current fluctuation in the SOI CMOSFET.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/55.784460</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>IEEE</publisher><subject>CMOS ; CMOS digital integrated circuits ; CMOS process ; CMOS technology ; CMOSFETs ; Devices ; Electric potential ; Fluctuation ; Fluctuations ; Frequency ; Impact ionization ; Instability ; Ionization ; Low-frequency noise ; Noise ; Semiconductor device noise ; Voltage</subject><ispartof>IEEE electron device letters, 1999-09, Vol.20 (9), p.484-486</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c224t-f7e44d1de4487533267d87fca4b10893f042c9317edea072b2d4c63876e5a3df3</citedby><cites>FETCH-LOGICAL-c224t-f7e44d1de4487533267d87fca4b10893f042c9317edea072b2d4c63876e5a3df3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/784460$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,54796</link.rule.ids></links><search><creatorcontrib>Ying-Che Tseng</creatorcontrib><creatorcontrib>Huang, W.M.</creatorcontrib><creatorcontrib>Ilderem, V.</creatorcontrib><creatorcontrib>Woo, J.C.S.</creatorcontrib><title>Floating body induced pre-kink excess low-frequency noise in submicron SOI CMOSFET technology</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>The well-known post-kink Lorentzian-like noise overshoot has been empirically correlated to the ac kink effect in the SOI CMOSFET in the past. This work demonstrates the existence of a 1/f/sup 2/ excess noise spectrum (<100 Hz) superimposed upon 1/f noise in partially depleted (PD) floating body SOI CMOS when devices are biased in the pre-kink region (before the dc kink onset voltage). While the impact ionization phenomenon is negligible in the pre-kink region, the new observed pre-kink excess noise provides a new insight into the body voltage instability and current fluctuation in the SOI CMOSFET.</description><subject>CMOS</subject><subject>CMOS digital integrated circuits</subject><subject>CMOS process</subject><subject>CMOS technology</subject><subject>CMOSFETs</subject><subject>Devices</subject><subject>Electric potential</subject><subject>Fluctuation</subject><subject>Fluctuations</subject><subject>Frequency</subject><subject>Impact ionization</subject><subject>Instability</subject><subject>Ionization</subject><subject>Low-frequency noise</subject><subject>Noise</subject><subject>Semiconductor device noise</subject><subject>Voltage</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1999</creationdate><recordtype>article</recordtype><recordid>eNp90DtPwzAQAGALgUQpDKxMnkAMKX7GzogqCpWKOhRGFCX2pYSmdokTQf49Rq0YWe6G-3QvhC4pmVBKsjspJ0oLkZIjNKJS6oTIlB-jEVGCJpyS9BSdhfBBCBVCiRF6mzW-6Gq3xqW3A66d7Q1YvGsh2dRug-HbQAi48V9J1cJnD84M2Pk6QLQ49OW2Nq13eLWc4-nzcjV7eMEdmHfnG78eztFJVTQBLg55jF4jmD4li-XjfHq_SAxjoksqBUJYamPUSnLOUmW1qkwhSkp0xisimMk4VWChIIqVzAqTcq1SkAW3FR-jm33fXevjjqHLt3Uw0DSFA9-HPKNZxiQXKsrrfyXTcbjQOsLbPYznhdBCle_aelu0Q05J_vvqXMp8_-por_a2BoA_dyj-ANVteHM</recordid><startdate>199909</startdate><enddate>199909</enddate><creator>Ying-Che Tseng</creator><creator>Huang, W.M.</creator><creator>Ilderem, V.</creator><creator>Woo, J.C.S.</creator><general>IEEE</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>199909</creationdate><title>Floating body induced pre-kink excess low-frequency noise in submicron SOI CMOSFET technology</title><author>Ying-Che Tseng ; Huang, W.M. ; Ilderem, V. ; Woo, J.C.S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c224t-f7e44d1de4487533267d87fca4b10893f042c9317edea072b2d4c63876e5a3df3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1999</creationdate><topic>CMOS</topic><topic>CMOS digital integrated circuits</topic><topic>CMOS process</topic><topic>CMOS technology</topic><topic>CMOSFETs</topic><topic>Devices</topic><topic>Electric potential</topic><topic>Fluctuation</topic><topic>Fluctuations</topic><topic>Frequency</topic><topic>Impact ionization</topic><topic>Instability</topic><topic>Ionization</topic><topic>Low-frequency noise</topic><topic>Noise</topic><topic>Semiconductor device noise</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ying-Che Tseng</creatorcontrib><creatorcontrib>Huang, W.M.</creatorcontrib><creatorcontrib>Ilderem, V.</creatorcontrib><creatorcontrib>Woo, J.C.S.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE/IET Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ying-Che Tseng</au><au>Huang, W.M.</au><au>Ilderem, V.</au><au>Woo, J.C.S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Floating body induced pre-kink excess low-frequency noise in submicron SOI CMOSFET technology</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>1999-09</date><risdate>1999</risdate><volume>20</volume><issue>9</issue><spage>484</spage><epage>486</epage><pages>484-486</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>The well-known post-kink Lorentzian-like noise overshoot has been empirically correlated to the ac kink effect in the SOI CMOSFET in the past. This work demonstrates the existence of a 1/f/sup 2/ excess noise spectrum (<100 Hz) superimposed upon 1/f noise in partially depleted (PD) floating body SOI CMOS when devices are biased in the pre-kink region (before the dc kink onset voltage). While the impact ionization phenomenon is negligible in the pre-kink region, the new observed pre-kink excess noise provides a new insight into the body voltage instability and current fluctuation in the SOI CMOSFET.</abstract><pub>IEEE</pub><doi>10.1109/55.784460</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 1999-09, Vol.20 (9), p.484-486 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_28267488 |
| source | IEEE Xplore (Online service) |
| subjects | CMOS CMOS digital integrated circuits CMOS process CMOS technology CMOSFETs Devices Electric potential Fluctuation Fluctuations Frequency Impact ionization Instability Ionization Low-frequency noise Noise Semiconductor device noise Voltage |
| title | Floating body induced pre-kink excess low-frequency noise in submicron SOI CMOSFET technology |
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