Development of single solution buffer layers on textured Ni substrate for HTS coated conductors

Much effort has recently been made to develop chemical methods for the manufacturing of coated conductors because of their scalability, low cost and high deposition rate. In this research, epitaxial buffer layers of Gd/sub 2/Zr/sub 2/O/sub 7/ (GZO) have been grown on Ni substrates using a newly deve...

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Bibliographic Details
Published in:IEEE transactions on applied superconductivity 2005-06, Vol.15 (2), p.2711-2714
Main Authors: Zhou, Y.X., Zhang, X., Fang, H., Putman, P.T., Salama, K.
Format: Article
Language:English
Subjects:
ANNEALING PROCESSES
Applied sciences
Buffer layers
Buffers
Chemicals
coated conductor
COATINGS
Conductors
COPPER OXIDE
Costs
CRYSTAL GROWTH
DEPOSITION
Electric connection. Cables. Wiring
ELECTRICAL CONDUCTORS
Electrical engineering. Electrical power engineering
Electronics
EPITAXY
Exact sciences and technology
High temperature superconductors
Manufacturing
Microelectronic fabrication (materials and surfaces technology)
MOCVD
Nickel
Pole figures
Scalability
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Solar energy
Substrates
SUPERCONDUCTORS
Surface layer
Texture
TEXTURES
Thin films
Various equipment and components
YBCO
YBCO superconductors
Yttrium barium copper oxide
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Summary:Much effort has recently been made to develop chemical methods for the manufacturing of coated conductors because of their scalability, low cost and high deposition rate. In this research, epitaxial buffer layers of Gd/sub 2/Zr/sub 2/O/sub 7/ (GZO) have been grown on Ni substrates using a newly developed metal organic decomposition (MOD) approach. The solution prepared from metal-organic precursors was deposited on Ni substrates using the dip coating technique and then was annealed at a high temperature. Texture analysis shows full-width-at-half-maximum (FWHM) values for out-of-plane and in-plane alignments as 6.5/spl deg/ and 8.1/spl deg/, respectively. Pole figure studies indicate a single cube-on-cube texture while SEM micrographs reveal a dense, continuous, and crack-free buffer layer. MOCVD was used to grow 1 /spl mu/m YBCO film on this GZO buffered Ni substrate. A critical current, J/sub c/, of about 1.3 MA/cm/sup 2/ at 77 K and self-field was obtained on YBCO (MOCVD)/GZO(MOD)/Ni. These results give promise to using a single buffer layer for scalable coated conductors.
ISSN:1051-8223
1558-2515
DOI:10.1109/TASC.2005.847792