GaN resonant cavity light-emitting diodes for plastic optical fiber applications
The optical designs of resonant GaN light-emitting diodes (LEDs) have been determined for maximum extraction efficiency into typical plastic optical fiber of numerical aperture 0.5. An optimum extraction efficiency of 3.9% can be achieved for a practical resonant cavity LED (RCLED), taking account o...
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Published in: | IEEE photonics technology letters 2004-09, Vol.16 (9), p.2006-2008 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | The optical designs of resonant GaN light-emitting diodes (LEDs) have been determined for maximum extraction efficiency into typical plastic optical fiber of numerical aperture 0.5. An optimum extraction efficiency of 3.9% can be achieved for a practical resonant cavity LED (RCLED), taking account of current growth and processing considerations. The optimized device is a metal-active layer distributed Bragg reflector construction. Constructive interference effects from the top metal mirror are found to play the dominant role in efficiency enhancement. The extraction efficiency of an optimized resonant single-mirror LED is found to be 3.3%, indicating a small compromise in performance compared with the more complex RCLED structure. |
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ISSN: | 1041-1135 1941-0174 |
DOI: | 10.1109/LPT.2004.833116 |