Efficient single-heterojunction Al(0.27)Ga(0.73)As/GaAs p-i-n photodiodes with 22-GHz bandwidths

A report is presented on the design, fabrication, testing, and modeling of single-heterojunction Al(0.27)Ga(0.73)As/Ga p-i-n photodiodes for use as components in optical receivers. The photodiodes are grown by molecular beam epitaxy and fabricated as 1100-mum(2) mesa structures. At 5-V reverse bias...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1991-08, Vol.38 (8), p.1968-1970
Main Authors: Johnsen, C, Sloan, S, Braun, D, Russell, J L, Zurakowski, M, Lightner, M, Kellert, F, Patterson, G, Koo, R, Derickson, D, Bowers, J
Format: Article
Language:English
Online Access:Get full text
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Summary:A report is presented on the design, fabrication, testing, and modeling of single-heterojunction Al(0.27)Ga(0.73)As/Ga p-i-n photodiodes for use as components in optical receivers. The photodiodes are grown by molecular beam epitaxy and fabricated as 1100-mum(2) mesa structures. At 5-V reverse bias and 850 nm, 100 fF of capacitance, 90 pA of leakage current, 73% external quantum efficiency, < 2% reflectivity, and 22-GHz bandwidths are typically measured
ISSN:0018-9383
DOI:10.1109/16.119043