High-Efficiency Subharmonic Oscillations from Silicon Diodes at Frequencies up to 6 GHz

Pulsed operation of Si avalanche diodes in an oscillator circuit has produced efficiencies exceeding 45 percent at frequencies of 2.0 to 3.0 GHz, and 17 percent at 6.4 GHz. The device has a lightly punched-through structure working in a coaxial cavity, which can support both the fundamental IMPATT a...

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Bibliographic Details
Published in:IEEE journal of solid-state circuits 1969-12, Vol.4 (6), p.388-391
Main Authors: Ying, R.S., Mankarious, R.G., Bower, R.W.
Format: Article
Language:English
Subjects:
Diodes
Electron devices
Frequency
Germanium
L-band
Microwave devices
Resonance
Silicon devices
Solid state circuits
Substrates
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Summary:Pulsed operation of Si avalanche diodes in an oscillator circuit has produced efficiencies exceeding 45 percent at frequencies of 2.0 to 3.0 GHz, and 17 percent at 6.4 GHz. The device has a lightly punched-through structure working in a coaxial cavity, which can support both the fundamental IMPATT and its subharmonic frequencies.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.1969.1050042