Effect of hydrogenation of the leakage currents of laser-annealed polysilicon TFTs

The effect of hydrogenation on the leakage currents of laser-annealed polysilicon thin-film transistors (TFTs) was investigated for a low-temperature (

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Bibliographic Details
Published in:IEEE transactions on electron devices 1991-09, Vol.38 (9), p.2058-2061
Main Authors: Aoyama, T., Koike, Y., Okajima, Y., Konishi, N., Suzuki, T., Miyata, K.
Format: Article
Language:English
Subjects:
Active matrix technology
Annealing
Applied sciences
Electronics
Energy states
Exact sciences and technology
Laser beams
Leakage current
Pulsed laser deposition
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor films
Silicon
Substrates
Thin film transistors
Transistors
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Description
Summary:The effect of hydrogenation on the leakage currents of laser-annealed polysilicon thin-film transistors (TFTs) was investigated for a low-temperature (
ISSN:0018-9383
1557-9646
DOI:10.1109/16.83729