Fast programming/erasing of thin-oxide EEPROMs

This work demonstrates that conventional thin-oxide EEPROM cells can be programmed (erased) in the nanosecond time scale with voltages lower than 18 V and still feature data retention times of the order of a few hours after 100 K program/erase (P/E) cycles. Our results suggest that thin-oxide nonvol...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2001-04, Vol.48 (4), p.817-819
Main Authors: Versari, R., Pieracci, A., Ricco, B.
Format: Article
Language:English
Subjects:
Data storage
EEPROM
EPROM
Memory devices
Nanocomposites
Nanomaterials
Nanostructure
Specifications
Voltage
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Summary:This work demonstrates that conventional thin-oxide EEPROM cells can be programmed (erased) in the nanosecond time scale with voltages lower than 18 V and still feature data retention times of the order of a few hours after 100 K program/erase (P/E) cycles. Our results suggest that thin-oxide nonvolatile (NV) memory devices can be suitable for fast read/write dynamic applications, at least when high cycling endurance is not a primary specification.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.915734