High power single mode operation of AlGaInP visible laser diode with lateral leaky waveguide structure

AlGaInP visible laser diode with lateral leaky waveguide structure employing 0.025 of negative refractive index step have been fabricated. In comparison to conventional loss guided structure, lateral leaky waveguide structure indicated stable fundamental mode operation. The output power at kink for...

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Bibliographic Details
Published in:IEEE photonics technology letters 1994-06, Vol.6 (6), p.684-686
Main Authors: Kidoguchi, I., Karniyama, S., Adachi, H., Mannoh, M., Ban, Y., Ohnaka, K.
Format: Article
Language:English
Subjects:
Absorption
Diode lasers
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Laser modes
Lasers
Optical refraction
Optical waveguides
Optics
Physics
Power generation
Power lasers
Propagation losses
Refractive index
Semiconductor lasers
laser diodes
Waveguide lasers
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Summary:AlGaInP visible laser diode with lateral leaky waveguide structure employing 0.025 of negative refractive index step have been fabricated. In comparison to conventional loss guided structure, lateral leaky waveguide structure indicated stable fundamental mode operation. The output power at kink for lateral leaky waveguide laser was around 1.5 times higher than loss guided structure for same stripe widths. The stability was attributed to large mode discrimination against higher order mode. The lateral leaky waveguide laser with 560 μm cavity length employing the antireflection (5%)/high reflection (82%) showed 66 mW of output power with no kinks at 25/spl deg/C.
ISSN:1041-1135
1941-0174
DOI:10.1109/68.300162