High-temperature defect structure of Cd- and Te-rich CdTe

Quasi-chemical formalism is used to evaluate high temperature (600/spl deg/C-1000/spl deg/C) in situ conductivity and Hall effect measurements and simultaneously tellurium atom fraction in CdTe along the three-phase curve. We show that the electric properties can be described only by two native defe...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2002-06, Vol.49 (3), p.1270-1274
Main Authors: Grill, R., Franc, J., Hoschl, P., Turkevych, I., Belas, E., Moravec, P., Fiederle, M., Benz, K.W.
Format: Article
Language:English
Subjects:
Atomic measurements
Cadmium
Cadmium tellurides
Conductivity measurement
Crystalline materials
Crystals
Defects
Density
Deviation
Formalism
Hall effect
Impurities
Mathematical models
Mechanical factors
Stoichiometry
Tellurium
Temperature
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Summary:Quasi-chemical formalism is used to evaluate high temperature (600/spl deg/C-1000/spl deg/C) in situ conductivity and Hall effect measurements and simultaneously tellurium atom fraction in CdTe along the three-phase curve. We show that the electric properties can be described only by two native defects-cadmium interstitial as the divalent donor and cadmium vacancy as the divalent acceptor. Close to Te saturation, another native defect must be involved in the model to allow the deviation from the stoichiometry irrespective of the low density of electrically charged defects. Deep divalent donor Te/sub Cd/ having both levels near or below the midgap best describes all the high-temperature experimental data.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2002.1039650