First tests with fully depleted pn-CCD's

The authors have fabricated 280- mu m-thick fully depletable p-n charge -coupled devices (CCDs) on high-resistivity silicon ( approximately 2.5 k Omega -cm). Their operation is based on the semiconductor drift-chamber principle. They are designed as energy- and position-sensitive radiation detectors...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 1988-02, Vol.35 (1), p.372-376
Main Authors: Struder, L., Lutz, G., Sterzik, M., Holl, P., Kemmer, J., Prechtel, U., Ziemann, T., Rehak, P.
Format: Article
Language:English
Subjects:
Charge coupled devices
Charge transfer
Electrodes
Electrons
Fabrication
Laboratories
Position sensitive particle detectors
Radiation detectors
Silicon
Testing
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Summary:The authors have fabricated 280- mu m-thick fully depletable p-n charge -coupled devices (CCDs) on high-resistivity silicon ( approximately 2.5 k Omega -cm). Their operation is based on the semiconductor drift-chamber principle. They are designed as energy- and position-sensitive radiation detectors for (minimum) ionizing particles and X-ray imaging. Two-dimensional semiconductor device modeling demonstrates the basic charge-transfer mechanisms. Prototypes of the detectors have been tested in static and dynamic conditions. A preliminary charge-transfer inefficiency was determined 6*10/sup -3/. The charge loss during the transfer is discussed, and an improved design, which is now being produced, is presented.< >
ISSN:0018-9499
1558-1578
DOI:10.1109/23.12746