On the existence of a nanometric multilayered structure in Al2O3/Al thin films

Al2O3/Al films (period thickness *L=20, 40 nm) were deposited onto (100) silicon substrate by reactive r.f. sputtering for substrate temperatures (Ts) ranging from -90 to 600 DGC. Secondary ion mass spectrometry demonstrated the deposition of Al2O3/Al stratified thin films with the generation of per...

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Bibliographic Details
Published in:Thin solid films 2004, Vol.446 (1), p.147-154
Main Authors: LE PAVEN-THIVET, C, FUSIL, S, AUBERT, P, MALIBERT, C, ZOZIME, A, HOUDY, Ph
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Deposition by sputtering
Electron and ion emission by liquids and solids
impact phenomena
Electron impact: secondary emission
Exact sciences and technology
Impact phenomena (including electron spectra and sputtering)
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
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Summary:Al2O3/Al films (period thickness *L=20, 40 nm) were deposited onto (100) silicon substrate by reactive r.f. sputtering for substrate temperatures (Ts) ranging from -90 to 600 DGC. Secondary ion mass spectrometry demonstrated the deposition of Al2O3/Al stratified thin films with the generation of periodic signals. X-ray reflectometry confirmed the periodicity with the presence of Bragg peaks in the experimental patterns. Nevertheless, the multilayered character of Al2O3/Al films is less and less pronounced as Ts increases. At low Ts, the relevant parameter to account for the absence of abrupt interfaces is the roughness of layers due to the aluminium layers, while at high Ts, the chemical interdiffusion clearly dominates.
ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(03)01389-0