Ferroelectric memories: a possible answer to the hardened nonvolatile question

Ferroelectric memory cells were fabricated using a process compatible with semiconductor VLSI manufacturing techniques that are basically nonvolatile and radiation-hard. The memory can be made NDRO (nondestructive readout) for strategic systems using several techniques, the most practical being a ra...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 1988-12, Vol.35 (6), p.1461-1466
Main Authors: Messenger, G.C., Coppage, F.N.
Format: Article
Language:English
Subjects:
Aerospace electronics
Costs
Ferroelectric materials
Manufacturing processes
Nonvolatile memory
Power system restoration
Random access memory
Semiconductor device manufacture
Very large scale integration
Wire
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Summary:Ferroelectric memory cells were fabricated using a process compatible with semiconductor VLSI manufacturing techniques that are basically nonvolatile and radiation-hard. The memory can be made NDRO (nondestructive readout) for strategic systems using several techniques, the most practical being a rapid read/restore in combination with EDAC software. This memory can replace plated wire and will have substantial advantages in cost, weight, size, power, and speed. It provides a practical cost-competitive solution to the need for nonvolatile RAM in all hardened tactical, avionic, and space systems.< >
ISSN:0018-9499
1558-1578
DOI:10.1109/23.25481