Gain-Bandwidth Optimization of Avalanche-Diode Amplifiers

This paper contains both theoretical and experimental results on the gain-bandwidth optimization of avalanche-diode amplifiers. These comprise a class of reflection-type negative-resistance amplifiers using avalanche diodes operating in the IMPATT or normal avalanche mode. Theoretical results on gai...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 1970-11, Vol.18 (11), p.932-942
Main Authors: Ku, W.H., Scherer, E.F.
Format: Article
Language:English
Subjects:
Admittance
Chebyshev approximation
Equivalent circuits
High power amplifiers
Impedance
Microwave amplifiers
Microwave frequencies
Monitoring
Semiconductor diodes
Voltage
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Summary:This paper contains both theoretical and experimental results on the gain-bandwidth optimization of avalanche-diode amplifiers. These comprise a class of reflection-type negative-resistance amplifiers using avalanche diodes operating in the IMPATT or normal avalanche mode. Theoretical results on gain-bandwidth optimization are derived using various equivalent-circuit models for the IMPATT diode. These results form the basis for a design theory for broad-band avalanche-diode amplifiers. The basic model of the IMPATT diode is that of a band-limited negative-resistance device. Explicit gain-bandwidth limitations are presented in this paper for classes of modified Butterworth- and Chebyshev-amplifier responses. This is then followed by a description of experimental results on broad-band avalanche-diode amplifiers.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.1970.1127372