GaAs/Al(x)Ga(1-x)As superlattice waveguide absorption modulators with very low drive voltage

The first GaAs/Al(x)Ga(1-x)As superlattice waveguide absorption modulators operating at ~860 nm that utilize the Wannier-Stark effect are reported. The < e1 > n < /e1 > =-1 Stark ladder peak, which is the transition from the valence band well to the nearest neighbor conduction band well,...

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Bibliographic Details
Published in:IEEE photonics technology letters 1992-06, Vol.4 (6), p.576-579
Main Authors: Moretti, A L, Vezzetti, D J, Chambers, F A, Stair, K A, Devane, G P
Format: Article
Language:English
Online Access:Get full text
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Summary:The first GaAs/Al(x)Ga(1-x)As superlattice waveguide absorption modulators operating at ~860 nm that utilize the Wannier-Stark effect are reported. The < e1 > n < /e1 > =-1 Stark ladder peak, which is the transition from the valence band well to the nearest neighbor conduction band well, is used. This peak shifts rapidly with applied electric field, resulting in drive voltages lower than can be achieved using the quantum-confined Stark effect for quantum-well waveguides of similar structure. For a 1000-mum-long waveguide at 867 nm, the authors obtain an extinction ratio of ~20 dB and a 4-dB attenuation with a drive voltage of 2 V
ISSN:1041-1135
DOI:10.1109/68.141973