1.9 µJ external-cavity dumped ultra-broad-area semiconductor nanosecond laser

An external-cavity dumped nanosecond (ns) ultra-broad-area laser diode (UBALD) at around 966 nm with high pulse energy is demonstrated. A 1 mm UBALD is used to produce high output power and high pulse energy. A Pockels cell (PC) combines with two polarization beam splitters (PBSs) and is employed to...

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Published in:Optics letters 2023-07, Vol.48 (13), p.3555-3558
Main Authors: Chen, Na, Wang, Xiao-Jun, Liu, Ke, Zong, Nan, Zhang, Ao-Nan, Zhang, Xiao-Ming, Peng, Qin-Jun
Format: Article
Language:English
Subjects:
Heart Rate
Lasers, Semiconductor
Semiconductors
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cited_by cdi_FETCH-LOGICAL-c200t-5ab38d9a095f75d345fb623a3e6868cfc483933271c8d7c5d58bb44c993068663
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container_end_page 3558
container_issue 13
container_start_page 3555
container_title Optics letters
container_volume 48
creator Chen, Na
Wang, Xiao-Jun
Liu, Ke
Zong, Nan
Zhang, Ao-Nan
Zhang, Xiao-Ming
Peng, Qin-Jun
description An external-cavity dumped nanosecond (ns) ultra-broad-area laser diode (UBALD) at around 966 nm with high pulse energy is demonstrated. A 1 mm UBALD is used to produce high output power and high pulse energy. A Pockels cell (PC) combines with two polarization beam splitters (PBSs) and is employed to cavity-dump a UBALD operating at 10 kHz repetition rate. At a pump current of 23 A, 11.4 ns pulses with a maximum pulse energy of ≈1.9 µJ and a maximum peak power of ≈166 W are achieved. The beam quality factor is measured to be =19.5 in the slow axis direction and =2.17 in the fast axis direction. Moreover, maximum average output power stability is confirmed, with a power fluctuation of less than 0.8% rms over 60 min. To the best of our knowledge, this is the first high-energy external-cavity dumped demonstration from an UBALD.
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subjects Heart Rate
Lasers, Semiconductor
Semiconductors
title 1.9 µJ external-cavity dumped ultra-broad-area semiconductor nanosecond laser
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