Comprehensive measurement of the near-infrared refractive index of GaAs at cryogenic temperatures

The refractive index is a critical parameter in optical and photonic device design. However, due to the lack of available data, precise designs of devices working in low temperatures are still frequently limited. In this work, we have built a homemade spectroscopic ellipsometer (SE) and measured the...

Full description

Saved in:
Bibliographic Details
Published in:Optics letters 2023-07, Vol.48 (13), p.3507-3510
Main Authors: Jiang, Guo-Qiu, Zhang, Qi-Hang, Zhao, Jun-Yi, Qiao, Yu-Kun, Ge, Zhen-Xuan, Liu, Run-Ze, Chung, Tung-Hsun, Lu, Chao-Yang, Huo, Yong-Heng
Format: Article
Language:English
Subjects:
Cryogenic temperature
Low temperature
Photons
Refractivity
Refractometry
Room temperature
Semiconductor devices
Semiconductors
Temperature
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The refractive index is a critical parameter in optical and photonic device design. However, due to the lack of available data, precise designs of devices working in low temperatures are still frequently limited. In this work, we have built a homemade spectroscopic ellipsometer (SE) and measured the refractive index of GaAs at a matrix of temperatures (4 K 
ISSN:0146-9592
1539-4794
DOI:10.1364/OL.491357