High-performance In/0.53/Ga/0.47/As thermophotovoltaic devices grown by solid source molecular beam epitaxy

In/0.53/Ga/0.47/As-based monolithic interconnected modules (MIMs) of thermophotovoltaic (TPV) devices lattice-matched to InP were grown by solid source molecular beam epitaxy. The MIM device consisted of ten individual In/0.53/Ga/0.47/As TPV cells connected in series on an InP substrate. An open-cir...

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Bibliographic Details
Published in:IEEE electron device letters 2002-12, Vol.23 (12), p.697-699
Main Authors: Hudait, M K, Andre, C L, Kwon, O, Palmisiano, M N, Ringel, S A
Format: Article
Language:English
Online Access:Get full text
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Summary:In/0.53/Ga/0.47/As-based monolithic interconnected modules (MIMs) of thermophotovoltaic (TPV) devices lattice-matched to InP were grown by solid source molecular beam epitaxy. The MIM device consisted of ten individual In/0.53/Ga/0.47/As TPV cells connected in series on an InP substrate. An open-circuit voltage (V/oc/) of 4.82 V, short-circuit current density (J/sc/) of 1.03 A/cm(2) and fill factor of ~73% were achieved for a ten-junction MIM with a bandgap of 0.74 eV under high intensity white light illumination. Device performance uniformity was better than 1.5% across a full 2-in InP wafer. The V/oc/ and J/sc/ values are the highest yet reported for 0.74-eV band gap n-p-n MIM devices.
ISSN:0741-3106
DOI:10.1109/LED.2002.806295