High-T(c) bolometers with silicon-nitride spiderweb suspension for far-infrared detection

• Published in: IEEE transactions on applied superconductivity 1999-06, Vol.9 (2), p.3350-3353
• Main Authors: de Nivelle, MJME, Bruijn, M P, de Korte, P A J, Sanchez, S, Elwenspoek, M, Heidenblut, T, Schwierzi, B, Michalke, W, Steinbeiss, E
• Format: Article
• Language: English
• ISSN: 1051-8223
• DOI: 10.1109/77.783747

High-T(c) GdBa(2)Cu(3)O(7-delta )(GBCO) superconducting transition edge bolometers with operating temperatures near 90 K have been made with both closed silicon-nitride membranes and patterned silicon-nitride (SiN) spiderweb-like suspension structures. As a substrate silicon-on-nitride (SON) wafers are used which are made by fusion bonding of a silicon wafer to a silicon wafer with a silicon-nitride top layer. The resulting monocrystalline silicon top layer on the silicon-nitride membranes enables the epitaxial growth of GBCO. By patterning the silicon-nitride the thermal conductance G is reduced from about 20 to 3 muW/K. The noise of both types of bolometers is dominated by the intrinsic noise from phonon fluctuations in the thermal conductance G. The optical efficiency in the far infrared is about 75% due to a goldblack absorption layer. The noise equivalent power NEP for FIR detection is 1.8 pW/{square root}Hz, and the detectivity D* is 5.4x10(10) cm {square root}Hz/W. Time constants are 0.1 and 0.6 s, for the closed membrane and the spiderweb like bolometers respectively. The effective time constant can be reduced with about a factor 3 by using voltage bias. Further reduction necessarily results in an increase of the NEP due to the 1/f noise of the superconductor