Josephson effects in MgB(2) metal masked ion damage junctions

We have successfully fabricated high quality Josephson junctions in MgB(2) thin films by a combination of 30 kV focused Ga ion beam nanolithography and 50 keV proton ion beam irradiation. The junctions show resistively shunted junction like current-voltage characteristics with additional excess curr...

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Published in:IEEE transactions on applied superconductivity 2003-06, Vol.13 (2), p.1071-1074
Main Authors: Kang, Dae-Joon, Peng, N H, Jeynes, C, Webb, R, Lee, H N, Oh, B, Moon, S H, Burnell, G, Stelmashenko, N A, Tarte, E J, Moore, D F, Blamire, M G
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container_issue 2
container_start_page 1071
container_title IEEE transactions on applied superconductivity
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creator Kang, Dae-Joon
Peng, N H
Jeynes, C
Webb, R
Lee, H N
Oh, B
Moon, S H
Burnell, G
Stelmashenko, N A
Tarte, E J
Moore, D F
Blamire, M G
description We have successfully fabricated high quality Josephson junctions in MgB(2) thin films by a combination of 30 kV focused Ga ion beam nanolithography and 50 keV proton ion beam irradiation. The junctions show resistively shunted junction like current-voltage characteristics with additional excess current. Monte Carlo simulation results for the optimized mask structure and experimental results for the dc and ac Josephson effects are presented. This technique is particularly useful for prototyping devices due to its simplicity and flexibility of fabrication and has a great potential for high-density integration.
doi_str_mv 10.1109/TASC.2003.814157
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