High-quality dielectric suitable for use with amorphous semiconductors

Very-high-quality Al/SUB 2/O/SUB 3/ films have been grown by anodizing aluminum films in a bath of tartaric acid, buffered with NH/SUB 4/OH and diluted with propylene glycol. Several thousand films were evaluated to demonstrate high resistivities and breakdown voltages, as well as dielectric propert...

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Bibliographic Details
Published in:IEEE journal of solid-state circuits 1974-06, Vol.9 (3), p.118-124
Main Authors: Haden, C.R., Barrett, J.L., Stone, J.L.
Format: Article
Language:English
Subjects:
Aluminum
Amorphous semiconductors
Anti-freeze
Conductivity
Dielectric materials
Dielectrics and electrical insulation
Frequency
Leakage current
Semiconductor films
Solid state circuits
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Summary:Very-high-quality Al/SUB 2/O/SUB 3/ films have been grown by anodizing aluminum films in a bath of tartaric acid, buffered with NH/SUB 4/OH and diluted with propylene glycol. Several thousand films were evaluated to demonstrate high resistivities and breakdown voltages, as well as dielectric properties stable with respect to film thickness, frequency, and applied voltage. It is shown that an optimum solution, an optimum buffer, an optimum pH, and an optimum anodization time exist.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.1974.1050478