Electron-beam fabrication of submicrometer bipolar transistors for high-frequency low-current operation

A submicrometer device technology has been developed for the design and fabrication of bipolar transistors capable of high-frequency operation at low currents. Direct write electron-beam lithography is used with a single-level resist process that is compatible with high dose ion implants and dry etc...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1981-11, Vol.28 (11), p.1346-1354
Main Authors: Greeneich, E.W., Tolliver, D.L., Gonzales, A.J.
Format: Article
Language:English
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Summary:A submicrometer device technology has been developed for the design and fabrication of bipolar transistors capable of high-frequency operation at low currents. Direct write electron-beam lithography is used with a single-level resist process that is compatible with high dose ion implants and dry etching, and is capable of producing feature sizes to at least the 0.5-µm level. A low temperature local oxidation process is used to minimize parasitic capacitances. Both process and device models are used in the design, which must consider the two-dimensional nature of the base-emitter region, since for these structures, the emitter junction depth is comparable in size to the emitter width. Data are presented and compared on 0.5-, 0.75-, and 1.0-µm devices.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1981.20612