Kink effect in submicrometer-gate MBE-grown InAlAs/InGaAs/InAlAs heterojunction MESFETs

The authors report the influence of the kink effect on the DC and microwave performance of i-InAlAs heterojunction doped-channel MESFETs lattice matched to an InP substrate with submicrometer gates. Kink effects were observed at room temperature as well as at 77 K in the DC measurement. The kinks se...

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Bibliographic Details
Published in:IEEE electron device letters 1988-12, Vol.9 (12), p.630-632
Main Authors: Kuang, J.B., Tasker, P.J., Wang, G.W., Chen, Y.K., Eastman, L.F., Aina, O.A., Hier, H., Fathimulla, A.
Format: Article
Language:English
Subjects:
Electron traps
Heterojunctions
Indium compounds
Indium gallium arsenide
Indium phosphide
Lattices
MESFETs
Microwave frequencies
Microwave measurements
Temperature
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Summary:The authors report the influence of the kink effect on the DC and microwave performance of i-InAlAs heterojunction doped-channel MESFETs lattice matched to an InP substrate with submicrometer gates. Kink effects were observed at room temperature as well as at 77 K in the DC measurement. The kinks seem to be related to deep-level electron trapping, and are not present at microwave frequencies. Measured results are presented showing that the existence of kinks at low operating frequencies does not seem to degrade the microwave performance of the devices.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.20418