Electroluminescence characteristics and current-conduction mechanism of a-SiC:H p-i-n thin-film light-emitting diodes with barrier layer inserted at p-i interface

In order to improve the electroluminescence (EL) characteristics of the hydrogenated amorphous silicon carbide (a-SiC:H) p-i-n thin-film light-emitting diode (TFLED), a barrier layer (BL) was inserted at its p-i interface to enhance the hole injection efficiency under forward-bias operation. The a-S...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1994-10, Vol.41 (10), p.1761-1769
Main Authors: Jen, Tean-Sen, Pan, Jen-Wei, Shin, Nerng-Fu, Hong, Jyh-Wong, Chang, Chun-Yen
Format: Article
Language:English
Subjects:
Amorphous silicon
Brightness
CARBIDES
CARBON COMPOUNDS
CHEMICAL REACTIONS
Current density
DEPLETION LAYER
DESIGN
Electrodes
ELECTROLUMINESCENCE
Electroluminescent devices
ENGINEERING
HYDROGENATION
LAYERS
LIGHT EMITTING DIODES
LUMINESCENCE
PIN photodiodes
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
Semiconductor thin films
SILICON CARBIDES
SILICON COMPOUNDS 426000 > Engineering-- Components, Electron Devices & Circuits-- (1990-)
Threshold voltage
USES
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Summary:In order to improve the electroluminescence (EL) characteristics of the hydrogenated amorphous silicon carbide (a-SiC:H) p-i-n thin-film light-emitting diode (TFLED), a barrier layer (BL) was inserted at its p-i interface to enhance the hole injection efficiency under forward-bias operation. The a-SiC:H TFLED's with various optical gaps of BL had been fabricated and characterized. In addition, a composition-graded n/sup +/-layer was used to reduce its series and contact resistances to the Al electrode and hence the EL threshold voltage (V/sub th/) of an a-SiC:H BL TFLED. The highest obtainable brightness of an a-SiC:H BL TFLED was 342 cd/m/sup 2/ at an injection current density of 600 mA/cm/sup 2/ and the lowest EL V/sub th/ achievable was 6.0 V. The current-conduction mechanism of an a-SiC:H BL TFLED had also been investigated. Within the lower applied-bias region, it showed an ohmic current, while within the higher applied-bias region, a space-charge-limited current (SCLC) was observed.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.324586