Model of threshold-voltage fluctuations in GaAs MESFET's

Due to an increased concentration of Ga vacancies near dislocations, local higher carrier activation of amphoteric implanted Si ions can occur. A quantitative relation between carrier activation and the distance between the device and dislocation is proposed. Monte-Carlo calculations of threshold-vo...

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Bibliographic Details
Published in:IEEE electron device letters 1987-01, Vol.8 (1), p.16-18
Main Authors: Anholt, R., Sigmon, T.W.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Fluctuations
Gallium arsenide
MESFETs
Semiconductor device measurement
Semiconductor device modeling
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Shape
Simulated annealing
Solids
Temperature sensors
Threshold voltage
Transistors
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Summary:Due to an increased concentration of Ga vacancies near dislocations, local higher carrier activation of amphoteric implanted Si ions can occur. A quantitative relation between carrier activation and the distance between the device and dislocation is proposed. Monte-Carlo calculations of threshold-voltage fluctuations versus dislocation density are made, and are compared with available data.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1987.26535