SiO2 HOLE ETCHING USING PERFLUOROCARBON ALTERNATIVE GAS WITH SMALL GLOBAL GREENHOUSE EFFECT

The etching of contact holes of 0.1 mu m size in SiO2 is achieved using, for the first time, cyclic (c-)C5F8 with a small greenhouse effect in the pulse-modulated inductively coupled plasma. The shape of the cross section of the contact hole is as good as that etched using conventional c-C4F8. It is...

Full description

Saved in:
Bibliographic Details
Published in:Jpn.J.Appl.Phys ,Part 1. Vol. 43, no. 6A, pp. 3586-3589. 2004 Part 1. Vol. 43, no. 6A, pp. 3586-3589. 2004, 2004, Vol.43 (6A), p.3586-3589
Main Authors: Ooka, M, Yokoyama, S
Format: Article
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The etching of contact holes of 0.1 mu m size in SiO2 is achieved using, for the first time, cyclic (c-)C5F8 with a small greenhouse effect in the pulse-modulated inductively coupled plasma. The shape of the cross section of the contact hole is as good as that etched using conventional c-C4F8. It is confirmed that Kr mixing instead of Ar in the plasma does not change the etching characteristics, although lowering of the electron temperature is expected which reduces the plasma-induced damage. Pulse modulation of the plasma is found to improve the etching selectivity of SiO2 with respect to Si. Langmuir probe measurement of the plasma suggests that the improvement of the etching selectivity is due to the deposition of fluorocarbon film triggered by lowering of the electron temperature when the off time of the rf power is extended. 9 refs.
ISSN:0021-4922
DOI:10.1143/jjap.43.3586