Microbeam analysis of MOS circuits

• Published in: IEEE transactions on nuclear science 1992-06, Vol.39 (3), p.431-435
• Main Authors: McNulty, P.J., Beauvais, W.J., Roth, D.R., Lynch, J.E., Knudson, A.R., Stapor, W.J.
• Format: Article
• Language: English
• Subjects: 440200 - Radiation Effects on Instrument Components, Instruments, or Electronic Systems; Applied sciences; Charge measurement; CHARGED PARTICLES; Circuit analysis; CMOS memory circuits; Current measurement; DRAM chips; ELECTRONIC CIRCUITS; Electronics; Exact sciences and technology; HEAVY IONS; INCIDENCE ANGLE; INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; Integrated circuits; Integrated circuits by function (including memories and processors); IONS; JUNCTIONS; MOS TRANSISTORS; P-N JUNCTIONS; Pulse generation; PULSES; RADIATION EFFECTS; Random access memory; Semiconductor device measurement; SEMICONDUCTOR DEVICES; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; SEMICONDUCTOR JUNCTIONS; SRAM chips; TRANSISTORS
• ISSN: 0018-9499; 1558-1578
• DOI: 10.1109/23.277532

Irradiation of MOS SRAMs (static random access memories) by energetic heavy ions results in pulses on the power lines of the device. Pulse-height analysis shows a series of peaks when the irradiation consists of identical particles incident in the same direction. Analysis through a microbeam shows that the pulses are generated by traversals of the p-n junctions making up the transistors of the device. Junctions in the memory array were found to dominate the spectrum from a CMOS device while those of the support circuitry dominate the spectrum from a DRAM (dynamic RAM). Charge collection spectra measured while the chip is irradiated by 20-MeV ions confined to a 10- mu m beam spot show the individual peaks of the CMOS SRAM spectra appearing and disappearing as the beam location spot moves across the memory cells.< >