Modular bipolar analysis: Part II-Application

• Published in: IEEE transactions on electron devices 1978-03, Vol.25 (3), p.306-313
• Main Authors: Dunkley, J.L., Kang, S.D., Nygaard, P.A.
• Format: Article
• Language: English
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/T-ED.1978.19075

This paper describes the application of a generalized modular model that is used to analyze realistic bipolar junction devices and integrated circuits from physical geometries and impurity profiles. A n-p-n transistor is partitioned into simple one-dimensional modules which enables a closed recursive equation to be used in solving for their electrical parameters. (See companion paper [13].) The individual module solutions are then superimposed upon the physical structure of the transistor to obtain its intrinsic electrical parameters. The advantages of using the recursive equation in performing ac, dc, and transient circuit analyses are simplicity and flexibility without a significant loss in accuracy. The application used to demonstrate this is the optimization and characterization of an Integrated Injection Logic (I 2 L) gate delay measured by an 11-gate ring oscillator. The agreement between the predicted and measured propagation delay is within 10 percent.