Improvement in hot carrier lifetime as a function of N(2)ion implantation before gate oxide growth in deep submicron NMOS devices

A detailed study of the impact of N(2) ion implantation (I/I) dose before gate oxide growth to hot carrier (HC) reliability of NMOSFETs is reported here, Improvements of more than 20x in HC lifetime were achieved by the introduction of sufficiently high N(2 ) (I/I) doses. It was found that for NMOSF...

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Bibliographic Details
Published in:IEEE electron device letters 1999-12, Vol.20 (12), p.602-604
Main Authors: Guarin, F J, Rauch, S E, La Rosa, G, Brelsford, K
Format: Article
Language:English
Online Access:Get full text
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Summary:A detailed study of the impact of N(2) ion implantation (I/I) dose before gate oxide growth to hot carrier (HC) reliability of NMOSFETs is reported here, Improvements of more than 20x in HC lifetime were achieved by the introduction of sufficiently high N(2 ) (I/I) doses. It was found that for NMOSFETs, the HC degradation correlates inversely to the initial interface state density introduced by the N(2) I/I process. This process-driven HC lifetime improvement does not require extensive post-metal anneals for HC lifetime improvements in advanced CMOS multilevel metal-dielectric processes
ISSN:0741-3106
DOI:10.1109/55.806098