Modeling of nanoscale gate-all-around MOSFETs

We present a compact physics-based model for the nanoscale gate-all-around MOSFET working in the ballistic limit. The current through the device is obtained by means of the Landauer approach, being the barrier height the key parameter in the model. The exact solution of the Poisson's equation i...

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Bibliographic Details
Published in:IEEE electron device letters 2004-05, Vol.25 (5), p.314-316
Main Authors: Jimenez, D., Saenz, J.J., Iniguez, B., Sune, J., Marsal, L.F., Pallares, J.
Format: Article
Language:English
Subjects:
Boundary conditions
Cathodes
CMOS technology
Devices
Electrons
Exact solutions
Mathematical analysis
MOSFETs
Nanocomposites
Nanomaterials
Nanostructure
Particle scattering
Poisson equation
Poisson equations
Scalability
Silicon
Wire
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Summary:We present a compact physics-based model for the nanoscale gate-all-around MOSFET working in the ballistic limit. The current through the device is obtained by means of the Landauer approach, being the barrier height the key parameter in the model. The exact solution of the Poisson's equation is obtained in order to deal with all the operation regions tracing properly the transitions between them.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2004.826526