MESFET's with nonalloyed ohmic contacts using a graded n+ (InGa)As cap layer

Results are presented on GaAs MESFET devices with nonalloyed ohmic contacts fabricated using a graded (InGa)As cap layer. Nonalloyed contacts do not require the ohmic alloy step and have much smoother morphology than alloyed metal contacts, permitting more reproducible and accurate gate-level lithog...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1989-06, Vol.36 (6), p.1213-1215
Main Authors: ESCHRICH, T. C, CARROLL, R. D, SACKS, R. N, TANSKI, W. J
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:Results are presented on GaAs MESFET devices with nonalloyed ohmic contacts fabricated using a graded (InGa)As cap layer. Nonalloyed contacts do not require the ohmic alloy step and have much smoother morphology than alloyed metal contacts, permitting more reproducible and accurate gate-level lithography. Specific contact resistances of 100 nanoohm sq cm were measured on FETs that exhibited g(m) = 210 mS/mm and f(t) = 23 GHz at 300 K for devices with 600-nm gate lengths. (I.E.)
ISSN:0018-9383
1557-9646
DOI:10.1109/16.24371