“Rotating” steps in Si(0 0 1) homoepitaxy

Steps on Si(0 0 1) surfaces which are initially not aligned along the high symmetry directions of the dimer reconstruction are observed, by scanning tunneling microscopy, to “rotate” toward [1 1 0] directions during Si growth. This step “rotation” occurs due to a faceting of the step edges. A theore...

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Bibliographic Details
Published in:ENR 2004-01, Vol.549 (1), p.31-36
Main Authors: Filimonov, S.N, Voigtländer, B
Format: Article
Language:English
Subjects:
Computer simulations
Faceting
Models of surface kinetics
Molecular beam epitaxy
Scanning tunneling microscopy
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Summary:Steps on Si(0 0 1) surfaces which are initially not aligned along the high symmetry directions of the dimer reconstruction are observed, by scanning tunneling microscopy, to “rotate” toward [1 1 0] directions during Si growth. This step “rotation” occurs due to a faceting of the step edges. A theoretical analysis of adatom incorporation into the steps shows that this kinetic instability may be caused by a suppressed mobility of the growing species along the S A step edge.
ISSN:0039-6028
0891-9526
1879-2758
DOI:10.1016/j.susc.2003.11.033