Amorphous silicon thin-film transistor with fluorinated silicon oxide ion stopper

We propose fluorinated silicon oxide (SiOF) as the ion-stopper of bottom-gate amorphous silicon thin film transistors (a-Si:H TFTs). The low dielectric constant SiOF on both the back-channel of the TFT and the crossover regions of gate/data lines can contribute to reducing the RC delay of the gate p...

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Bibliographic Details
Published in:IEEE electron device letters 2000-06, Vol.21 (6), p.301-303
Main Authors: Kim, Kyung Wook, Cho, Kyu Sik, Ryu, Jai Il, Yoo, Keon Ho, Jang, Jin
Format: Article
Language:English
Subjects:
Amorphous silicon
Capacitance
Delay
Density
Dielectric constant
Dielectric materials
Fluorination
Gates
Liquid crystal displays
Plasma temperature
Semiconductor devices
Silicon compounds
Silicon dioxide
Silicon oxides
Substrates
Thin film transistors
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Summary:We propose fluorinated silicon oxide (SiOF) as the ion-stopper of bottom-gate amorphous silicon thin film transistors (a-Si:H TFTs). The low dielectric constant SiOF on both the back-channel of the TFT and the crossover regions of gate/data lines can contribute to reducing the RC delay of the gate pulse signal in active-matrix liquid-crystal displays. Besides, the a-Si:H TFT with a SiOF stopper shows an improved performance compared to the widely-employed silicon nitride (SiN/sub x/) stopper TFT, because the fluorine incorporation reduces the interface state density between a-Si:H and SiOF.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.843157