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Wafer-scale inverted gallium phosphide-on-insulator rib waveguides for nonlinear photonics

We report a gallium phosphide-on-insulator (GaP-OI) photonic platform fabricated by an intermediate-layer bonding process aiming to increase the manufacture scalability in a low-cost manner. This is enabled by the "etch-n-transfer" sequence, which results in inverted rib waveguide structur...

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Bibliographic Details
Published in:Optics letters 2023-07, Vol.48 (14), p.3781-3784
Main Authors: Cheng, Weiren, Geng, Zhaoting, Yu, Zhuoyu, Liu, Yihan, Yang, Yatao, Wu, Pengzhuo, Ji, Houling, Yu, Xiaolun, Wang, Yifan, Bao, Changjing, Li, Yi, Zhao, Qiancheng
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Language:English
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Summary:We report a gallium phosphide-on-insulator (GaP-OI) photonic platform fabricated by an intermediate-layer bonding process aiming to increase the manufacture scalability in a low-cost manner. This is enabled by the "etch-n-transfer" sequence, which results in inverted rib waveguide structures. The shallow-etched 1.8 µm-wide waveguide has a propagation loss of 23.5 dB/cm at 1550 nm wavelength. Supercontinuum generation based on the self-phase modulation effect is observed when the waveguides are pumped by femtosecond pulses. The nonlinear refractive index of GaP, n , is extracted to be 1.9 × 10  m /W, demonstrating the great promise of the GaP-OI platform in third-order nonlinear applications.
ISSN:0146-9592
1539-4794
DOI:10.1364/OL.494949