Measurement and modeling of Si integrated inductors

This work describes a method to derive from measurements an accurate lumped element model of spiral integrated inductors on silicon substrate. The analysis method is based on a wideband two-port measurement of the s-parameters of the device under test and enables an accurate evaluation of the parasi...

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Bibliographic Details
Published in:IEEE transactions on instrumentation and measurement 1998-10, Vol.47 (5), p.1372-1378
Main Authors: Arcioni, P., Castello, R., De Astis, G., Sacchi, E., Svelto, F.
Format: Article
Language:English
Subjects:
CMOS process
CMOS technology
Conductivity
Inductors
Q factor
Semiconductor device measurement
Silicon
Spirals
Testing
Wideband
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Summary:This work describes a method to derive from measurements an accurate lumped element model of spiral integrated inductors on silicon substrate. The analysis method is based on a wideband two-port measurement of the s-parameters of the device under test and enables an accurate evaluation of the parasitic effects that limit the performances of these integrated devices.
ISSN:0018-9456
1557-9662
DOI:10.1109/19.746613