Math methods in transistor modeling: Condition numbers for parameter extraction

Condition numbers expressing the sensitivity of computed circuit element values to inaccuracies in S-parameter measurements are derived and evaluated for a standard small-signal MESFET model. The condition numbers shed light on the common difficulty experienced by transistor modelers in extracting a...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 1998-09, Vol.46 (9), p.1313-1314
Main Authors: King, F.D., Winson, P., Snider, A.D., Dunleavy, L., Levinson, D.P.
Format: Article
Language:English
Subjects:
Electrical resistance measurement
Mathematics
Measurement standards
MESFET circuits
Nonlinear equations
Parameter estimation
Parameter extraction
Scattering parameters
Springs
Upper bound
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Summary:Condition numbers expressing the sensitivity of computed circuit element values to inaccuracies in S-parameter measurements are derived and evaluated for a standard small-signal MESFET model. The condition numbers shed light on the common difficulty experienced by transistor modelers in extracting accurate values for the input resistance. Other elements are also classified according to their sensitivity.
ISSN:0018-9480
1557-9670
DOI:10.1109/22.709477