MQW DBR lasers with monolithically integrated external-cavity electroabsorption modulators fabricated without modification of the active region

We report the design and operation of multiple-quantum-well distributed Bragg reflectors (MQW DBR) lasers with monolithically integrated external-cavity electroabsorption (EA) modulators without modification of the active region fabricated using only a single growth step. Devices were fabricated wit...

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Bibliographic Details
Published in:IEEE photonics technology letters 1997-05, Vol.9 (5), p.566-568
Main Authors: Lammert, R.M., Roh, S.D., Hughes, J.S., Osowski, M.L., Coleman, J.J.
Format: Article
Language:English
Subjects:
Distributed Bragg reflectors
Distributed feedback devices
Heating
Laser feedback
Laser theory
Laser transitions
Optical design
Optical materials
Quantum well devices
Threshold current
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Summary:We report the design and operation of multiple-quantum-well distributed Bragg reflectors (MQW DBR) lasers with monolithically integrated external-cavity electroabsorption (EA) modulators without modification of the active region fabricated using only a single growth step. Devices were fabricated with operating wavelengths of 1.06, 1.07, and 1.08 μm, which are red-shifted from the material gain peak wavelength (/spl lambda/=1.05 μm) by 100, 200, and 300 /spl Aring/, respectively. The /spl lambda/=1.06-μm device has a continuous-wave (CW) threshold current of 16 mA and a slope efficiency of 0.09 W/A from the modulator facet, while the /spl lambda/=1.08 μm device has a CW threshold current of 33 mA and a slope efficiency of 0.40 W/A from the modulator facet. The /spl lambda/=1.06-, 1.07-, and 1.08-μm device exhibits an extinction ratio of /spl ges/20 dB at a modulator bias of 1.0, 1.4, and 2 V, respectively.
ISSN:1041-1135
1941-0174
DOI:10.1109/68.588102