A methodology for deep sub-0.25 μm CMOS technology prediction

We present a novel methodology for characterization of sub-quartermicron CMOS technologies. It involves process calibration, device calibration employing two-dimensional device simulation and automated Technology Computer Aided Design (TCAD) optimization and, finally, transient mixed-mode device/cir...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2001-10, Vol.48 (10), p.2331-2336
Main Authors: Palankovski, V, Belova, N, Grasser, T, Puchner, H, Aronowitz, S, Selberherr, S
Format: Article
Language:English
Subjects:
Calibration
CMOS
Computer aided design
Computer simulation
Devices
Methodology
Optimization
Oscillators
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Summary:We present a novel methodology for characterization of sub-quartermicron CMOS technologies. It involves process calibration, device calibration employing two-dimensional device simulation and automated Technology Computer Aided Design (TCAD) optimization and, finally, transient mixed-mode device/circuit simulation. The proposed methodology was tested on 0.25 mu m technology and applied to 0.13 mu m technology in order to estimate ring oscillator speed. The simulation results show an excellent agreement with available experimental data
ISSN:0018-9383
DOI:10.1109/16.954473