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Low-heat high-power scaling using InGaAs-diode-pumped Yb:YAG lasers

We report to our knowledge the highest to date quasi-CW output power, 600 W and pulse energy, >1 J, for an InGaAs diode-pumped Yb:YAG laser. In separate preliminary results, we have also obtained 225 W of average output power under true CW diode pumping. This performance was obtained using a lase...

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Bibliographic Details
Published in:IEEE journal of selected topics in quantum electronics 1997-02, Vol.3 (1), p.105-116
Main Authors: Bruesselbach, H.W., Sumida, D.S., Reeder, R.A., Byren, R.W.
Format: Article
Language:English
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Summary:We report to our knowledge the highest to date quasi-CW output power, 600 W and pulse energy, >1 J, for an InGaAs diode-pumped Yb:YAG laser. In separate preliminary results, we have also obtained 225 W of average output power under true CW diode pumping. This performance was obtained using a laser head designed to be part of a master oscillator power amplifier (MOPA) operating at 3 kW. We summarize why the diode-pumped Yb:YAG crystal laser is ideal for scaling to high average powers and the different approaches being pursued. We also report our latest results for side-pumped rod devices.
ISSN:1077-260X
1558-4542
DOI:10.1109/2944.585822