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Low-heat high-power scaling using InGaAs-diode-pumped Yb:YAG lasers
We report to our knowledge the highest to date quasi-CW output power, 600 W and pulse energy, >1 J, for an InGaAs diode-pumped Yb:YAG laser. In separate preliminary results, we have also obtained 225 W of average output power under true CW diode pumping. This performance was obtained using a lase...
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Published in: | IEEE journal of selected topics in quantum electronics 1997-02, Vol.3 (1), p.105-116 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | We report to our knowledge the highest to date quasi-CW output power, 600 W and pulse energy, >1 J, for an InGaAs diode-pumped Yb:YAG laser. In separate preliminary results, we have also obtained 225 W of average output power under true CW diode pumping. This performance was obtained using a laser head designed to be part of a master oscillator power amplifier (MOPA) operating at 3 kW. We summarize why the diode-pumped Yb:YAG crystal laser is ideal for scaling to high average powers and the different approaches being pursued. We also report our latest results for side-pumped rod devices. |
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ISSN: | 1077-260X 1558-4542 |
DOI: | 10.1109/2944.585822 |