Monte Carlo simulation of electron transport properties in extremely thin SOI MOSFET's

Electron mobility in extremely thin-film silicon-on-insulator (SOI) MOSFET's has been simulated. A quantum mechanical calculation is implemented to evaluate the spatial and energy distribution of the electrons. Once the electron distribution is known, the effect of a drift electric field parall...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1998-05, Vol.45 (5), p.1122-1126
Main Authors: Gamiz, F., Lopez-Villanueva, J.A., Roldan, J.B., Carceller, J.E., Cartujo, P.
Format: Article
Language:English
Subjects:
Computational modeling
Electron mobility
MOSFET circuits
Particle scattering
Phonons
Poisson equations
Semiconductor films
Semiconductor thin films
Silicon on insulator technology
Very large scale integration
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Summary:Electron mobility in extremely thin-film silicon-on-insulator (SOI) MOSFET's has been simulated. A quantum mechanical calculation is implemented to evaluate the spatial and energy distribution of the electrons. Once the electron distribution is known, the effect of a drift electric field parallel to the Si-SiO/sub 2/ interfaces is considered. The Boltzmann transport equation is solved by the Monte Carlo method. The contribution of phonon, surface-roughness at both interfaces, and Coulomb scattering has been considered. The mobility decrease that appears experimentally in devices with a silicon film thickness under 20 nm is satisfactorily explained by an increase in phonon scattering as a consequence of the greater confinement of the electrons in the silicon film.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.669557