Influence of carrier leakage on bistability in an inhomogeneously pumped semiconductor laser

A new model for the inherent electrical state of the tandem laser is presented. The electrical coupling between the sections is known from experiments to have a large impact on such a laser. In contrast to earlier rate-equation analysis, our new model allows for an investigation of this influence. I...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 1987-05, Vol.23 (5), p.487-498
Main Authors: Ohlander, U., Sahlen, O.
Format: Article
Language:English
Subjects:
Boundary conditions
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Laser excitation
Laser modes
Laser theory
Lasers
Numerical models
Optical bistability
Optical materials
Optical signal processing
Optics
Physics
Pump lasers
Semiconductor lasers
Semiconductor lasers
laser diodes
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Summary:A new model for the inherent electrical state of the tandem laser is presented. The electrical coupling between the sections is known from experiments to have a large impact on such a laser. In contrast to earlier rate-equation analysis, our new model allows for an investigation of this influence. In this paper we present results from a theoretical study of how the bistability depends on various parameters when this coupling is taken into account.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.1987.1073398