Millimeter-Wave Silicon IMPATT Sources and Combiners for the 110-260-GHz Range

This paper reports recent progress in CVV and pulsed silicon IMPATT sources in the 110-260-GHz frequency range. Pulsed output power levels of 3, 1.3, and 0.7 W, and CW output power levels of 110, 60, and 25 mW have been consistently achieved from single-drift IMPATT diodes at 140, 170, and 217 GHz,...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 1981-12, Vol.29 (12), p.1278-1284
Main Authors: Kai Chang, Thrower, W.F., Hayashibara, G.M.
Format: Article
Language:English
Subjects:
Diodes
Electrons
Fabrication
Frequency
Laboratories
Military aircraft
P-n junctions
Packaging
Power generation
Silicon
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Summary:This paper reports recent progress in CVV and pulsed silicon IMPATT sources in the 110-260-GHz frequency range. Pulsed output power levels of 3, 1.3, and 0.7 W, and CW output power levels of 110, 60, and 25 mW have been consistently achieved from single-drift IMPATT diodes at 140, 170, and 217 GHz, respectively. A Read-type IMPATT diode that generated good output power over a wide frequency range was fabricated. A bridged double-quartz standoff package was developed and successfully used for the entire frequency range. Power combiners at center frequencies of 140 and 217 GHz were developed with peak output power of 9.2 and 1 W, respectively.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.1981.1130553