Synthesis and structural properties of GaN powders

Gallium nitride(GaN) powders have been synthesized by nitriding β-Ga 2O 3 powders in the flow of NH 3 gas at a nitridation temperature of 950 °C for 35 min. X-ray powder diffraction (XRD) reveals that the synthesized GaN is of a single-phase wurtzite structure with lattice constants a = 3.191 Å. and...

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Bibliographic Details
Published in:Materials chemistry and physics 2004-11, Vol.88 (1), p.180-184
Main Authors: Xiao, Hong-Di, Ma, Hong-Lei, Xue, Cheng-Shan, Ma, Jin, Zong, Fu-Jian, Zhang, Xi-Jian, Ji, Feng, Hu, Wen-Rong
Format: Article
Language:English
Subjects:
GaN powder
SEM
Synthesis
TEM
XPS
XRD
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Summary:Gallium nitride(GaN) powders have been synthesized by nitriding β-Ga 2O 3 powders in the flow of NH 3 gas at a nitridation temperature of 950 °C for 35 min. X-ray powder diffraction (XRD) reveals that the synthesized GaN is of a single-phase wurtzite structure with lattice constants a = 3.191 Å. and c = 5.192 Å. Transmission electron microscopy (TEM) also indicates that GaN particle is a single crystal. X-ray photo-electron spectroscopy (XPS) confirms the formation of bonding between Ga and N, and yields the surface stoichiometry of Ga:N of 1:1. The morphology of GaN particles examined by scanning electron microscopy (SEM) is ruleless.
ISSN:0254-0584
1879-3312
DOI:10.1016/j.matchemphys.2004.07.004