Set of equations for stress-mediated evolution of the nonequilibrium dopant-defect system in semiconductor crystals

A set of equations describing a stress-mediated evolution of the nonequilibrium dopant-defect system has been derived and analyzed. Together with coupled diffusion of dopant atoms and point defects, we consider the drift of all mobile species in different charge states, namely vacancies, self-inters...

Full description

Saved in:
Bibliographic Details
Published in:Journal of alloys and compounds 2004-11, Vol.382 (1-2), p.283-287
Main Authors: Fedotov, A.K., Velichko, O.I., Dobrushkin, V.A.
Format: Article
Language:English
Subjects:
Arsenic
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Exact sciences and technology
Impurities in semiconductors
Phosphorus
Physics
Point defects
Semiconductors
Silicon
Strain
Stress
Structure of solids and liquids
crystallography
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A set of equations describing a stress-mediated evolution of the nonequilibrium dopant-defect system has been derived and analyzed. Together with coupled diffusion of dopant atoms and point defects, we consider the drift of all mobile species in different charge states, namely vacancies, self-interstitials, and pairs “dopant atom–point defect”, in the field of stress. It has been shown that stresses may affect the diffusion of dopant atoms mainly in two ways: (1) directly, due to the drift of the pairs in the field of stress; (2) indirectly, by the formation of nonuniform defect distribution due to the drift of point defects. On this basis, various features of doping processes, such as phenomena of “uphill” impurity diffusion near the surface (within the framework of the first or second mechanisms) and the peculiarities of high concentration phosphorus diffusion (due to the second mechanism), can be explained. Numerical computations of high concentration phosphorus diffusion in silicon and transient-enhanced diffusion of ion-implanted arsenic have been carried out, and parameters of diffusion have been extracted. The calculated dopant profiles agree well with the experimental data. The set of equations obtained is applicable to modeling of diffusion in the layers with nonuniform stress distribution arising due to high concentration of dopant atoms, lattice mismatch, etc.
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2004.05.031