Ni–Cr thin film resistor fabrication for GaAs monolithic microwave integrated circuits

• Published in: Thin solid films 2006-08, Vol.514 (1), p.52-57
• Main Authors: Vinayak, Seema, Vyas, H.P., Muraleedharan, K., Vankar, V.D.
• Format: Article
• Language: English
• Subjects: Cross-disciplinary physics: materials science; rheology; Deposition by sputtering; Electrical properties and measurements; Exact sciences and technology; Materials science; Metallization; Methods of deposition of films and coatings; film growth and epitaxy; Ni–Cr; Physics; Resistivity; Sputtering; Thin film resistor
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2006.02.025

Different Ni–Cr alloys were sputter-deposited on silicon nitride-coated GaAs substrates and covered with a spin-coated polyimide layer to develop thin film metal resistors for GaAs monolithic microwave integrated circuits (MMICs). The contact to the resistors was made through vias in the polyimide layer by sputter-deposited Ti/Au interconnect metal. The variation of contact resistance, sheet resistance ( R S) and temperature coefficient of resistance (TCR) of the Ni–Cr resistors with fabrication process parameters such as polyimide curing thermal cycles and surface treatment given to the wafer prior to interconnect metal deposition has been studied. The Ni–Cr thin film resistors exhibited lower R S and higher TCR compared to the as-deposited Ni–Cr film that was not subjected to thermal cycles involved in the MMIC fabrication process. The change in resistivity and TCR values of Ni–Cr films during the MMIC fabrication process was found to be dependent on the Ni–Cr alloy composition.