Enhanced low-dose-rate sensitivity of a low-dropout voltage regulator

Ionization-induced degradation of the 29372 low-dropout voltage regulator is most severe at low-dose-rate (/spl sim/10 mrad(SiO/sub 2/)/s) and zero load current. The most sensitive parameter is the maximum output drive current, which is a function of the gain of the large lateral pnp output transist...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on nuclear science 1998-12, Vol.45 (6), p.2571-2576
Main Authors: Pease, R.L., McClure, S., Gorelick, J., Witczak, S.C.
Format: Article
Language:English
Subjects:
Annealing
Circuits
Degradation
Electron traps
Logic
Regulators
Space charge
Space technology
Temperature
Voltage
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Ionization-induced degradation of the 29372 low-dropout voltage regulator is most severe at low-dose-rate (/spl sim/10 mrad(SiO/sub 2/)/s) and zero load current. The most sensitive parameter is the maximum output drive current, which is a function of the gain of the large lateral pnp output transistor. Significant degradation of this parameter occurs at 5-10 krad(SiO/sub 2/) at low-dose-rate. A moderate load current (/spl sim/250 mA) during irradiation significantly mitigates the damage. The mitigation of the damage is proportional to irradiation load current and is not a strong function of irradiation temperature or input voltage. The mechanism for the mitigation of damage appears to be current density dependent passivation of interface and/or border traps by mobile hydrogen-related species. The worst-case space system application is in unbiased spares.
ISSN:0018-9499
1558-1578
DOI:10.1109/23.736499