Influence of buffer layer thickness on DC performance of GaAs/AlGaAs heterojunction bipolar transistors grown on silicon substrates

The DC performance of GaAs/AlAs heterojunction bipolar transistors (HBTs) grown on silicon substrates with buffer layers ranging from 0 to 5 mu m was investigated. Current gain, collector-emitter breakdown voltage, emitter-base and collector-base diode ideality factors, and breakdown voltages were m...

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Bibliographic Details
Published in:IEEE electron device letters 1988-12, Vol.9 (12), p.657-659
Main Authors: Ma, T., Ueda, D., Lee, W.-S., Adkisson, J., Harris, J.S.
Format: Article
Language:English
Subjects:
Applied sciences
Buffer layers
Current measurement
Diodes
Electronics
Exact sciences and technology
Gain measurement
Gallium arsenide
Heterojunction bipolar transistors
Laboratories
Molecular beam epitaxial growth
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Substrates
Transistors
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Summary:The DC performance of GaAs/AlAs heterojunction bipolar transistors (HBTs) grown on silicon substrates with buffer layers ranging from 0 to 5 mu m was investigated. Current gain, collector-emitter breakdown voltage, emitter-base and collector-base diode ideality factors, and breakdown voltages were measured as the buffer layer thickness was varied between 0 and 5 mu m. The current gain steadily increases with increasing buffer layer thickness until the layer reaches 3 mu m. However, the other DC parameters are relatively insensitive to the buffer layer thickness. A small-signal current gain of 60 is typically achieved for devices with 6*6- mu m/sup 2/ emitters at a density of 6*10/sup 4/ A/cm/sup 2/ when the buffer layer is >or=3 mu m.< >
ISSN:0741-3106
1558-0563
DOI:10.1109/55.20427