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Structure defects of icosahedral quasicrystals as electrically active centres
By dilatometric experiments on rapidly quenched quasicrystalline Al–Cu–Fe, in the course of their annealing it is proposed that icosahedral (I-) phases with free carriers of different signs (either electrons or holes) have different senses of the volume changes upon ordering. The effect discovered s...
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Published in: | Journal of non-crystalline solids 2004-03, Vol.334 (Complete), p.380-383 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | By dilatometric experiments on rapidly quenched quasicrystalline Al–Cu–Fe, in the course of their annealing it is proposed that icosahedral (I-) phases with free carriers of different signs (either electrons or holes) have different senses of the volume changes upon ordering. The effect discovered serves as a direct experimental support that the structural defects in I-quasicrystals are electrically active centers. This circumstance allows the identification of intrinsic and extrinsic properties of I-phases and opens novel opportunities for understanding the physical properties of real quasicrystals. |
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ISSN: | 0022-3093 1873-4812 |
DOI: | 10.1016/j.jnoncrysol.2003.12.007 |