Study of photoluminescence spectra of Si-rich SiNx films

The silicon-rich silicon nitride thin films were prepared by low pressure chemical vapor deposition (LPCVD) technique. Greenish-blue visible photoluminescence (PL) were observed at room temperature, with six peaks at 2.97, 2.77, 2.55, 2.32, 2.10 and 1.90 eV, respectively. After the rapid thermal ann...

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Bibliographic Details
Published in:Materials letters 2004-07, Vol.58 (19), p.2397-2400
Main Authors: Liu, Yuzhen, Zhou, Yuqin, Shi, Wanquan, Zhao, Lingli, Sun, Baoyin, Ye, Tianchun
Format: Article
Language:English
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Summary:The silicon-rich silicon nitride thin films were prepared by low pressure chemical vapor deposition (LPCVD) technique. Greenish-blue visible photoluminescence (PL) were observed at room temperature, with six peaks at 2.97, 2.77, 2.55, 2.32, 2.10 and 1.90 eV, respectively. After the rapid thermal annealing (RTA) process, the position of PL spectrum of thin film has no obvious shift, but relative intensity of some peaks has changed. We found that the abundance of Si and some oxygen in the films, which introduce great amount of dangling bond defects, are the dominating factors leading to the strong room-temperature visible PL emission. A simple model of gap state was built to explain the PL mechanism of silicon nitride thin films.
ISSN:0167-577X
DOI:10.1016/j.matlet.2004.02.015