The effect of electron bombardment on optical properties of n-type silicon

The production of p–n junctions and polar transistors in silicon to small scale lengths may be possible by plasma and electron beam techniques using the sub-threshold change of n-silicon into p-silicon by electron beam and its reversion at higher electron beam intensities. As a first step, in this s...

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Bibliographic Details
Published in:Applied surface science 2004-10, Vol.237 (1-4), p.161-164
Main Authors: Sari, Amir H., Osman, F., Ghoranneviss, M., Hora, H., Höpfl, R., Hantehzadeh, M.R.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Electron bombardment
Electrons and positron radiation effects
Exact sciences and technology
n-type silicon
Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity
Optical properties
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of bulk materials and thin films
Physical radiation effects, radiation damage
Physics
Structure of solids and liquids
crystallography
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Summary:The production of p–n junctions and polar transistors in silicon to small scale lengths may be possible by plasma and electron beam techniques using the sub-threshold change of n-silicon into p-silicon by electron beam and its reversion at higher electron beam intensities. As a first step, in this study, experimental observation of the effect of electron beam on optical properties of n-type silicon samples is described. Electron bombardment with the energy of 20keV and different doses in the range of 1016 to 1019electron/cm2 has been carried out. Use was made of a new design of an electron beam gun as described in details, using a helium obstructed discharge of a concave cold cathode. Optical properties of irradiated samples were determined by a UV–vis–NIR spectrophotometer. The results show an increase in the longer wave length than the fundamental band gap absorption with increasing electron dose.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2004.06.119